| 摘要 |
PROBLEM TO BE SOLVED: To provide technology to solve problems in forming a semiconductor embedded region of a p-type MOS transistor. SOLUTION: The manufacturing method of a semiconductor device comprises the steps of forming a gate electrode with silicon across a first and a second active regions on which an n-type and a p-type MOS transistors are disposed, injecting n-type impurity into the first active region and the gate electrode in vicinity of the first active region, forming a mask for exposing the second active region and the gate electrode in vicinity of the second active region, forming a recess by etching the second active region and the gate electrode in a mask opening, removing a natural oxide film on a surface of the recess and thereby reduces the opening, cleaning the surface of the recess with a halogen gas, and forming a semiconductor embedded region in the recess. As a result, an edge of the n-type region on the gate electrode on the side of the second active region and an edge of the mask opening on the side of the first active region are separated in a manner that the n-type region on the gate electrode is not exposed in the opening reduced in the cleaning step. COPYRIGHT: (C)2012,JPO&INPIT |
