Semiconductor device and driver circuit with an active device and isolation structure interconnected through a resistor circuit, and method of manufacture thereof

摘要

Embodiments of semiconductor devices and driver circuits include a semiconductor substrate (1510) having a first conductivity type, an isolation structure (including a sinker region (1522) and a buried layer (1520)), an active device (1462, 1463, 1500, 1600, 1700, 1800, 1900, 2000) within a portion (1530) of the substrate contained by the isolation structure, and a resistor circuit (1546, 1646, 1746, 1846, 1946, 2046). The buried layer is positioned below the top substrate surface (1512), and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region (1534), which is separated from the isolation structure by a portion (1537) of the semiconductor substrate having the first conductivity type. The resistor circuit is connected between the isolation structure and the body region. The resistor circuit may include one or more resistor networks and, optionally, a Schottky diode (1710, 1810) and/or one or more PN diode(s) (1910, 2010) in series and/or parallel with the resistor network(s).