发明名称 Interconnection structure and fabrication thereof
摘要 <p>A method of forming an interconnection structure is disclosed, including providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure includes a conductive material and is adjoined to the first pad.</p>
申请公布号 EP2731133(A2) 申请公布日期 2014.05.14
申请号 EP20130191022 申请日期 2013.10.31
申请人 DELTA ELECTRONICS, INC. 发明人 TSAI, HSIN-CHANG;LEE, CHIA-YEN;LEE, PENG-HSIN
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
代理机构 代理人
主权项
地址