摘要 |
Provided is SiO x , wherein the amount of generated H 2 O gas detected in a temperature range of 200 to 800°C in a temperature-programmed desorption gas analysis is 680 ppm or less. The amount of the generated H 2 O is desirably 420 ppm or less. In addition, in a graph obtained by X-ray diffraction, the peak intensity P1 at a Si peak point exhibited near 2¸ = 28° and the base intensity P2 at a peak point interpolated from the gradient of average intensities in the fore and aft positions near the peak point desirably satisfy (P1-P2)/P2‰¤0.2. This SiO x is used as a vapor deposition material, whereby the generation of splashing is suppressed in forming a film, and a vapor-deposited film having excellent gas barrier properties can be formed. In addition, this SiO x is used as a negative electrode active material, whereby high initial efficiency of a lithium-ion secondary battery can be maintained. |