发明名称 Thin film deposition apparatus
摘要 The present invention relates to a thin film deposition apparatus and a substrate processing apparatus comprising the same. According to the present invention, the film deposition apparatus includes a chamber, a gas supply part supplying at least one among a process gas and a purge gas in the chamber, and a substrate transfer part moving substrates along a moving path in the chamber. The gas supply part has gas supply modules comprising supply channels supplying one among the process gas and the purge gas in the chamber. The gas supply modules are separated from each other with a predetermined distance and have a discharge channel between the chamber and the gas supply module, as well as to each gas supply module.
申请公布号 KR101394184(B1) 申请公布日期 2014.05.14
申请号 KR20120066083 申请日期 2012.06.20
申请人 发明人
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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