METHODS OF FORMING III-V SEMICONDUCTOR LAYER AND METHODS OF MANUFACTURING LIGHT EMITTING DIODES USING THE SAME

摘要

Provided is a method for forming a III-V semiconductor layer. The method includes the steps of: supplying a precursor of a first element which is a III element and a precursor of a second element which is a V element to a reaction chamber; and forming the III-V semiconductor layer including the first element and the second element on the substrate in the reaction chamber by the reaction of the precursor of the first element and the precursor of the second element. A first precursor including the first element is supplied in a pulse mode. A second precursor including the first element is supplied in a rectification mode.