| 摘要 |
<p>The invention relates to extreme ultraviolet photolithography masks operating in reflection. These masks comprise a lower mirror (22) covering a substrate (20), and absorbent zones formed on the lower mirror in an etched pattern that defines the pattern to be reproduced. According to the invention, the absorbent zones are formed by resonant Fabry-Pérot cavities exhibiting a strong absorption peak for the operating wavelength. The cavities are formed by the lower mirror (22), an upper mirror (24) and, between the mirrors, a transparent medium, the thickness of which is calculated so as to produce an absorption peak at the operating wavelength. The medium may be formed from silicon (27) or by a superposition of a thin silicon oxide layer (forming a buffer layer to facilitate etching) and a silicon layer.</p> |
