发明名称 |
METHOD FOR LOW TEMPERATURE GROWTH OF INORGANIC MATERIALS FROM SOLUTION USING CATALYZED GROWTH AND RE-GROWTH |
摘要 |
<p>The present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemically treating a substrate to activate it for growth of the silicon oxide. (b) Immersing the treated substrate into a bath with a reactive solution. (c) Regenerating the reactive solution to allow for continued growth of the silicon oxide. In another embodiment of the present invention, the apparatus includes a first container holding a reactive solution, a substrate on which the silicon oxide is deposited, a second container holding silica, and a means for adding silica to the reactive solution.</p> |
申请公布号 |
EP1579490(B1) |
申请公布日期 |
2014.05.14 |
申请号 |
EP20030786878 |
申请日期 |
2003.11.18 |
申请人 |
WILLIAM MARSH RICE UNIVERSITY |
发明人 |
BARRON, ANDREW, R.;WHITSITT, ELIZABETH, ANNE |
分类号 |
H01L21/31;C23C8/02;C23C8/40;C23C18/00;H01L21/316;H01L21/76 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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