| 摘要 |
PURPOSE: A method for growing a silicon single crystal ingot is provided to improve a yield by reducing a pop-out phenomenon in a tailing process. CONSTITUTION: A necking process is performed by using a single crystal seed after polycrystalline silicon is melted in a crucible. A body is grown after a single crystal ingot is grown in the diameter direction of the single crystal seed. A tailing process is performed to separate the body from melt. The diameter of the body of the single crystal ingot is 400 mm or greater. A melt gap is controlled below 35 mm in the tailing process. |
