| 摘要 |
<p>Provided are semiconductor device and a method of manufacturing same. The semiconductor device includes a semiconductor substrate; a first well of a first conductive type placed in the semiconductor substrate; a drift region of a second conductive type placed in the semiconductor substrate, and having first and second drift doping regions, wherein the first and second drift doping regions overlap the first well; and a body region of the first conductive type placed in the first well and making contact with the first drift doping region. The first and second drift doping regions include first and second conductive dopants. An average concentration of the first conductive dopant in the first drift doping region is less than that of the first conductive dopant in the second drift doping region.</p> |
