发明名称 |
SUBSTRATE INTEGRATED PLASMA SOURCE |
摘要 |
<p>A plasma source (10) comprising a substrate (11) with a conductive bottom layer (18) and a split ring (20) arranged on an opposite side of the substrate (11). The split ring (20) comprises of a first branch (15) and a second branch (16), which branches (15, 16) are in metallic contact in one end and forms a gap in another end. The substrate (11) has a cut out (12) extending through the substrate (11) and provided at least partly in the gap. A first vertically extending electrode (13) is connected to the first branch (15) of the split ring (20), and extends into the substrate cut out (12) in the substrate thickness direction, thereby forming a plasma chamber (12b) within the cut out (12) of the substrate.</p> |
申请公布号 |
EP2730151(A1) |
申请公布日期 |
2014.05.14 |
申请号 |
EP20120811224 |
申请日期 |
2012.07.05 |
申请人 |
BENCAR AB;BERGLUND, MARTIN;KRATZ, HENRIK |
发明人 |
BERGLUND, MARTIN;KRATZ, HENRIK |
分类号 |
H05H1/24;H05H1/46 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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