发明名称 SUBSTRATE INTEGRATED PLASMA SOURCE
摘要 <p>A plasma source (10) comprising a substrate (11) with a conductive bottom layer (18) and a split ring (20) arranged on an opposite side of the substrate (11). The split ring (20) comprises of a first branch (15) and a second branch (16), which branches (15, 16) are in metallic contact in one end and forms a gap in another end. The substrate (11) has a cut out (12) extending through the substrate (11) and provided at least partly in the gap. A first vertically extending electrode (13) is connected to the first branch (15) of the split ring (20), and extends into the substrate cut out (12) in the substrate thickness direction, thereby forming a plasma chamber (12b) within the cut out (12) of the substrate.</p>
申请公布号 EP2730151(A1) 申请公布日期 2014.05.14
申请号 EP20120811224 申请日期 2012.07.05
申请人 BENCAR AB;BERGLUND, MARTIN;KRATZ, HENRIK 发明人 BERGLUND, MARTIN;KRATZ, HENRIK
分类号 H05H1/24;H05H1/46 主分类号 H05H1/24
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