PROCEDIMIENTO PARA LA OBTENCION DE MULTIPLES CAPAS DE SILICIO CRISTALINO A PARTIR DE UNA OBLEA DE SILICIO

摘要

The invention relates to a method and system for producing multi-layers of crystalline silicon from a silicon wafer, in which the thickness of the different layers can be controlled so that it varies from hundreds of nanometers to tens of micrometers. The production method comprises steps of: lithography, electrochemical etching, and recrystallisation of the wafer while the reaction parameters are being controlled.