| 摘要 |
It is possible to suppress a change in a resistance value caused by a potential of a semiconductor substrate 10 near a resistance element layer 13, a power line passing on or above the resistance element layer, or a signal line, without generating useless current or a distortion in a signal. A first conductive layer 15 biased by the potential of a first electrode 11 and a second conductive layer 16 biased by the potential of a second electrode 12 cover below the resistance element layer equally. A change in the resistance value caused by a potential difference between the resistance element layer and a neighboring semiconductor substrate 14 is cancelled by the first conductive layer and the second conductive layer covering at least one of above and below the resistance element layer with both ends biased, so the change in the resistance value is suppressed. |
