发明名称 |
Integrated circuit devices including complex dielectric layers and related fabrication methods |
摘要 |
An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed. |
申请公布号 |
US8723250(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201113042871 |
申请日期 |
2011.03.08 |
申请人 |
LEE JONG-CHEOL;PARK KI-YEON;CHUNG CHUN-HYUNG;YOO CHA-YOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-CHEOL;PARK KI-YEON;CHUNG CHUN-HYUNG;YOO CHA-YOUNG |
分类号 |
H01L21/768;H01L49/02 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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