发明名称 Integrated circuit devices including complex dielectric layers and related fabrication methods
摘要 An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed.
申请公布号 US8723250(B2) 申请公布日期 2014.05.13
申请号 US201113042871 申请日期 2011.03.08
申请人 LEE JONG-CHEOL;PARK KI-YEON;CHUNG CHUN-HYUNG;YOO CHA-YOUNG;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JONG-CHEOL;PARK KI-YEON;CHUNG CHUN-HYUNG;YOO CHA-YOUNG
分类号 H01L21/768;H01L49/02 主分类号 H01L21/768
代理机构 代理人
主权项
地址