| 发明名称 |
Hybrid CMOS nanowire mesh device and FINFET device |
| 摘要 |
A method of forming a hybrid semiconductor structure on an SOI substrate. The method includes an integrated process flow to form a nanowire mesh device and a FINFET device on the same SOI substrate. Also included is a semiconductor structure which includes the nanowire mesh device and the FINFET device on the same SOI substrate. |
| 申请公布号 |
US8722472(B2) |
申请公布日期 |
2014.05.13 |
| 申请号 |
US201113328015 |
申请日期 |
2011.12.16 |
| 申请人 |
CHANG JOSEPHINE B.;CHANG LELAND;LIN CHUNG-HSUN;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE B.;CHANG LELAND;LIN CHUNG-HSUN;SLEIGHT JEFFREY W. |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
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