发明名称 |
Photovoltaic device and method for manufacturing the same |
摘要 |
The method includes: steps of forming an n-type diffusion layer having an n-type impurity diffused thereon at a first surface side of a p-type silicon substrate; forming a reflection prevention film on the n-type diffusion layer; forming a back-surface passivation film made of an SiONH film on a second surface of the silicon substrate; forming a paste material containing silver in a front-surface electrode shape on the reflection prevention film; forming a front surface electrode that is contacted to the n-type diffusion layer by sintering the silicon substrate; forming a paste material containing a metal in a back-surface electrode shape on the back-surface passivation film; and forming a back surface electrode by melting a metal in the paste material by irradiating laser light onto a forming position of the back surface electrode and by solidifying the molten metal. |
申请公布号 |
US8722453(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US200913259079 |
申请日期 |
2009.04.14 |
申请人 |
NAKATANI MITSUNORI;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NAKATANI MITSUNORI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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