发明名称 |
Integration of an amorphous silicon resistive switching device |
摘要 |
An integrated circuit device. The integrated circuit device includes a semiconductor substrate having a surface region. A gate dielectric layer overlies the surface region of the substrate. The device includes a MOS device having a p+ active region. The p+ active region forms a first electrode for a resistive switching device. The resistive switching device includes an amorphous silicon switching material overlying the p+ active region and a metal electrode overlies the first metal conductor structure. The metal electrode includes a metal material, upon application of a positive bias to the metal electrode, forms a metal region in the amorphous silicon switching material. The MOS device provides for a select transistor for the integrated circuit device. |
申请公布号 |
US8723154(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US20100894057 |
申请日期 |
2010.09.29 |
申请人 |
JO SUNG HYUN;NAZARIAN HAGOP;CROSSBAR, INC. |
发明人 |
JO SUNG HYUN;NAZARIAN HAGOP |
分类号 |
H01L29/12;H01L21/8239;H01L27/105;H01L29/8605 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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