| 摘要 |
Non-volatile solid state mass storage device and methods for improving write performance thereof. The storage device includes a NAND flash controller, an array of NAND flash memory integrated circuits, and means for determining a lowest unused page number of each write target block in a group of the NAND flash memory integrated circuits that are simultaneously accessible at any given time by a write command. The storage device has further means for programming a dummy write to at least a first write target block in a first NAND flash memory integrated circuit within the group of NAND flash memory integrated circuits if the lowest unused page number within the first write target block is lower than the lowest unused page number of a second write target block in a second NAND flash memory integrated circuit in the group of NAND flash memory integrated circuits. |
