发明名称 THROUGHPUT ENHANCEMENT FOR SCANNED BEAM ION IMPLANTERS
摘要 An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece by scanning the ions along an axis in a first direction, a movable stage configured to move the workpiece in a second direction generally orthogonal to the first direction, an ion detection component configured to measure ion dosage at approximately an outer edge of the workpiece, a first direction driver that receives commands from the controller to move in a fast scan speed on wafer or a fast scan speed off wafer and a second direction driver that receives commands from the controller to move the workpiece movable stage in a slow scan speed.
申请公布号 KR101394086(B1) 申请公布日期 2014.05.13
申请号 KR20097004214 申请日期 2007.08.13
申请人 发明人
分类号 H01J37/302;H01L21/265 主分类号 H01J37/302
代理机构 代理人
主权项
地址