Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process

摘要

A trench MOSFET with embedded schottky rectifier having at least one anti-punch through implant region using reduced masks process is disclosed for avalanche capability enhancement and cost reduction. The source regions have a higher doping concentration and a greater junction depth along sidewalls of the trenched source-body contacts than along adjacent channel regions near the gate trenches.