| 摘要 |
One embodiment of a semiconductor device according to the present invention includes a substrate, a base compound semiconductor layer layered on the substrate to form a base, a channel defining compound semiconductor layer layered on the base compound semiconductor layer to define a channel, and an impact ionization control layer that is layered within a layering range of the base compound semiconductor layer and controls the location of impact ionization, wherein the base compound semiconductor layer is formed of a first compound semiconductor, the channel defining compound semiconductor layer is formed of a second compound semiconductor, and the impact ionization control layer is formed of a third compound semiconductor that has a smaller band gap than the first compound semiconductor. |
