| 摘要 |
An anti-fuse memory with coupling channel is provided. The anti-fuse memory includes a substrate of a first conductive type, a doped region of a second conductive type, a coupling gate, a gate dielectric layer, an anti-fuse gate, and an anti-fuse layer. The substrate has an isolation structure. The doped region is disposed in the substrate. A channel region is defined between the doped region and the isolation structure. The coupling gate is disposed on the substrate between the doped region and the isolation structure. The coupling gate is adjacent to the doped region. The gate dielectric layer is disposed between the coupling gate and the substrate. The anti-fuse gate is disposed on the substrate between the coupling gate and the isolation structure. The anti-fuse gate and the coupling gate have a space therebetween. The anti-fuse layer is disposed between the anti-fuse gate and the substrate. |
