发明名称 |
Dual gate finFET devices |
摘要 |
A method comprises: forming a first array of fins and a second array of fins on a substrate; masking off the first array of fins from the second array of fins with a first mask; depositing a dielectric layer on the second array of fins and on the first mask on the first array of fins; masking off the dielectric layer deposited on the second array of fins with a second mask; removing the dielectric layer and the first mask from the first array of fins; removing the second mask from the second array of fins to expose the dielectric layer on the second array of fins; and depositing a chemox layer on the first array of fins. The chemox layer is thinner than the dielectric layer on the second array of fins. |
申请公布号 |
US8722494(B1) |
申请公布日期 |
2014.05.13 |
申请号 |
US201213666031 |
申请日期 |
2012.11.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BASKER VEERARAGHAVAN S.;LEOBANDUNG EFFENDI;YAMASHITA TENKO |
分类号 |
H01L21/336;H01L29/66;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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