发明名称 |
Resist underlayer film forming composition, and method for forming resist pattern using the same |
摘要 |
There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond. |
申请公布号 |
US8722840(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201113884132 |
申请日期 |
2011.11.11 |
申请人 |
SAKAMOTO RIKIMARU;FUJITANI NORIAKI;ENDO TAKAFUMI;OHNISHI RYUJI;HO BANGCHING;NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
SAKAMOTO RIKIMARU;FUJITANI NORIAKI;ENDO TAKAFUMI;OHNISHI RYUJI;HO BANGCHING |
分类号 |
G03F7/11;C08L67/04 |
主分类号 |
G03F7/11 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|