Reduced topography in isolation regions of a semiconductor device by applying a deposition/etch sequence prior to forming the interlayer dielectric

摘要

Contact failures in sophisticated semiconductor devices may be reduced by relaxing the pronounced surface topography in isolation regions prior to depositing the interlayer dielectric material system. To this end, a deposition/etch sequence may be applied in which a fill material may be removed from the active region, while the recesses in the isolation regions may at least be partially filled.