发明名称 |
Flow rate detection device having anti-undercurrent material |
摘要 |
The flow rate detection device includes a sensor element and a support. The sensor element includes: a cavity which is formed in a rear surface of a plate-shaped semiconductor silicon substrate by removing part of the plate-shaped semiconductor silicon substrate; and a thin film portion which is disposed over the cavity and includes a detecting element. The support includes a fitting portion into which the sensor element is to be disposed. The sensor element is supported to the fitting portion by an adhesive in a floating manner. A gap formed between the sensor element and the fitting portion is filled with an anti-undercurrent material. The sensor element has a texture including protrusions and depressions formed on a surface opposed to the fitting portion, and the anti-undercurrent material is brought into contact with the texture. |
申请公布号 |
US8720268(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201113070131 |
申请日期 |
2011.03.23 |
申请人 |
NAKANISHI TAIKI;INOUE HIROMOTO;KAWAMA YOSHITATSU;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NAKANISHI TAIKI;INOUE HIROMOTO;KAWAMA YOSHITATSU |
分类号 |
G01F1/68 |
主分类号 |
G01F1/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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