| 摘要 |
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a gate structure disposed on the substrate, wherein the gate structure has a high-k dielectric layer; a first seal layer disposed on a sidewall of the gate structure, wherein the first seal layer is an oxygen-free seal layer and is non-L-shaped; and a second seal layer disposed on a sidewall of the first seal layer, wherein the second seal layer is an L-shaped seal layer. |
