发明名称 |
Voids in STI regions for forming bulk FinFETs |
摘要 |
An integrated circuit structure includes a substrate; two insulation regions over the substrate, with one of the two insulation regions including a void therein; and a first semiconductor strip between and adjoining the two insulation regions. The first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions. |
申请公布号 |
US8723271(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201313918728 |
申请日期 |
2013.06.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YUAN FENG;LEE TSUNG-LIN;CHEN HUNG-MING;CHANG CHANG-YUN |
分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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