发明名称 |
Semiconductor device and a method for manufacturing a semiconductor device |
摘要 |
A first wiring is disposed over a semiconductor substrate. A first via is disposed over the first wiring. Further, the bottom surface of the first via is in contact with the first wiring. A first insulation layer is disposed over the semiconductor substrate, and is in contact with at least the top surface of the first wiring and the side surface of the first via. At least a part of each side surface of the first wiring and the first via cuts off each metal crystal grain. |
申请公布号 |
US8722532(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201213567546 |
申请日期 |
2012.08.06 |
申请人 |
USAMI TATSUYA;KITAJIMA HIROSHI;RENESAS ELECTRONICS CORPORATION |
发明人 |
USAMI TATSUYA;KITAJIMA HIROSHI |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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