| 发明名称 |
Cascoded high voltage junction field effect transistor |
| 摘要 |
A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is connected to a drain electrode of another JFET stage. |
| 申请公布号 |
US8722477(B2) |
申请公布日期 |
2014.05.13 |
| 申请号 |
US201213350740 |
申请日期 |
2012.01.14 |
| 申请人 |
TSUCHIKO HIDEAKI;ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED |
发明人 |
TSUCHIKO HIDEAKI |
| 分类号 |
H01L21/337 |
主分类号 |
H01L21/337 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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