发明名称 |
FinFET device fabrication using thermal implantation |
摘要 |
A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin. |
申请公布号 |
US8722431(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201213426785 |
申请日期 |
2012.03.22 |
申请人 |
PRADHAN NILAY ANIL;TODOROV STANISLAV S.;DECKER-LUCKE KURT;PETRY KLAUS;COLOMBEAU BENJAMIN;GUO BAONIAN;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
PRADHAN NILAY ANIL;TODOROV STANISLAV S.;DECKER-LUCKE KURT;PETRY KLAUS;COLOMBEAU BENJAMIN;GUO BAONIAN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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