发明名称 |
Method of manufacturing a monolithic duplexer |
摘要 |
A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs. |
申请公布号 |
US8720023(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US20090647188 |
申请日期 |
2009.12.24 |
申请人 |
PARK YUN-KWON;SONG IN-SANG;YUN SEOK-CHUL;HONG SEOG-WOO;HA BYEOUNG-JU;SHIM DONG-HA;PARK HAE-SEOK;NAM KUANG-WOO;KIM DUCK-HWAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YUN-KWON;SONG IN-SANG;YUN SEOK-CHUL;HONG SEOG-WOO;HA BYEOUNG-JU;SHIM DONG-HA;PARK HAE-SEOK;NAM KUANG-WOO;KIM DUCK-HWAN |
分类号 |
H03H9/15;H03H3/007 |
主分类号 |
H03H9/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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