NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of preventing malfunctions of a lead transistor with certainty without increasing the number of bit lines.SOLUTION: In a nonvolatile semiconductor memory device 1, while a second bit line BLN1 connected to a program transistor 5a of a first cell 2a and used for writing data is also used as a bit line for reading in another second cell 2b by switching switch transistors SWa and SWb, program transistors 5a and 5b and erase transistors 3a and 3b to be an electric charge transfer path at writing and eliminating data are provided. Thereby, malfunctions of lead transistors 4a and 4b caused by being used for writing and eliminating data can be prevented with certainty without increasing the number of bit lines.