| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a TSV structure is introduced in a layered element of a three-dimensional structure in which a plurality of semiconductor elements are layered but when the number of input/output terminals increases, an area of an input/output circuit proportionally increases thereby to limit an integration degree and memory capacity.SOLUTION: A semiconductor element manufacturing method protects an input terminal having no input protection circuit by forming a structure for protecting input terminals on respective semiconductor elements which compose a laminated element from electrostatic destruction and removing the protection structure after layering each element. |
