| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can avoid local concentration of an eddy current occurring at an end of a conductive layer thereby to enable inhibition of heat generation caused by increase in a current density.SOLUTION: A semiconductor device 10 comprises: a positive electrode bus bar 11 and a negative electrode bus bar 13 which are arranged in parallel and at a distance from each other; a conductive layer 15 having a conductive part 15b for covering the positive electrode bus bar 11 and the negative electrode bus bar 13; and insulators 17 arranged among the positive electrode bus bar 11 and the negative electrode bus bar 13 and the conductive layer 15. The conductive layer 15 includes a bent part 15c which is connected to an end 15a of the conductive part in an extension direction of the positive electrode bus bar 11 and the negative electrode bus bar 13 and which is bent with respect to the conductive part 15b. |
