LIGHT EMITTING DEVICE

摘要

According to an embodiment of the present invention, a light emitting device includes: a first conductive semiconductor layer; and a second conductive semiconductor layer having the second conductive semiconductor layer, and an electron blocking layer which is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer and adjacent to the active layer, wherein the electron blocking layer comprises a barrier layer and a plurality of pairs structure of a well layer having a smaller energy band gap than the barrier layer. The electron blocking layer includes: a first region which is adjacent to the active layer and contains at least one pair structure of the well layer and the barrier layer; and a second region which is disposed on the first region and contains at least one pair structure of the well layer and the barrier layer. The thickness of the well layer belonging to the first region is thicker than the thickness of the well layer belonging to the second region.