发明名称 |
CRYSTAL ORIENTATION CONTROL DEVICE, AND FILM DEPOSITION APPARATUS AND ANNEALING APPARATUS HAVING THE SAME, AND CRYSTAL ORIENTATION CONTROL METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a crystal orientation control device for controlling the crystal orientation of a thin film of a ferrodielectric substance filmed on a silicon substrate, and a film deposition apparatus and an annealing apparatus having the device, and a crystal orientation control method.SOLUTION: An annealing apparatus comprises: a film deposition chamber 1 having a heating apparatus 7 capable of heating a ferrodielectric substance to be sputter-filmed on the surface of a silicon substrate 11 opposed to a target 10, to a crystallization temperature or higher; a cooling chamber having cooling devices 20 and 21 adjacent to the film deposition chamber through a gate valve 18 for forcedly cooling the filmed silicon substrate to a Curie temperature of the ferrodielectric substance or lower; and a transport device 3 for transporting the silicon substrate between the film deposition chamber and the cooling chamber. |
申请公布号 |
JP2014084494(A) |
申请公布日期 |
2014.05.12 |
申请号 |
JP20120233798 |
申请日期 |
2012.10.23 |
申请人 |
TOHOKU UNIV |
发明人 |
TANAKA HIDEJI;YOSHIDA SHINYA;ESASHI MASAKI;WASA KIYOTAKA |
分类号 |
C23C14/34;C23C14/08;C23C14/58 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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