发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To solve a problem where a rewrite error and erasure error cannot be detected properly even when a flag storage area for detecting the rewrite error and erasure error is provided in a nonvolatile memory.SOLUTION: A semiconductor integrated circuit device includes a nonvolatile memory that stores a check flag for detecting a rewrite error or erasure error. If a nonvolatile transistor for the check flag does not output 0 (or 1) when an applied voltage to a control gate of the nonvolatile transistor is a rewrite verification voltage and if it does not output 1 (or 0) when the voltage is an erasure verification voltage, an error value indicating a rewrite or erasure error is generated.</p> |
申请公布号 |
JP2014086108(A) |
申请公布日期 |
2014.05.12 |
申请号 |
JP20120233816 |
申请日期 |
2012.10.23 |
申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
NAKAMURA EIJI ; GUSHIKEN OKINARI ; TSUCHIBUCHI HIROKI |
分类号 |
G11C16/02;G11C16/06;G11C29/50 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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