发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To solve a problem where a rewrite error and erasure error cannot be detected properly even when a flag storage area for detecting the rewrite error and erasure error is provided in a nonvolatile memory.SOLUTION: A semiconductor integrated circuit device includes a nonvolatile memory that stores a check flag for detecting a rewrite error or erasure error. If a nonvolatile transistor for the check flag does not output 0 (or 1) when an applied voltage to a control gate of the nonvolatile transistor is a rewrite verification voltage and if it does not output 1 (or 0) when the voltage is an erasure verification voltage, an error value indicating a rewrite or erasure error is generated.</p>
申请公布号 JP2014086108(A) 申请公布日期 2014.05.12
申请号 JP20120233816 申请日期 2012.10.23
申请人 RENESAS ELECTRONICS CORP 发明人 NAKAMURA EIJI ; GUSHIKEN OKINARI ; TSUCHIBUCHI HIROKI
分类号 G11C16/02;G11C16/06;G11C29/50 主分类号 G11C16/02
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