发明名称 WRITE DRIVER IN SENSE AMPLIFIER FOR RESISTIVE TYPE MEMORY AND OPERATION METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a write drive for use for level shifting in a sense amplifier for a resistive type memory.SOLUTION: The write driver includes a cross-coupled latch, a first output section, a second output section, and an input section. The first output section includes one or more first driving transistors to drive a first current through the first output section and not through the cross-coupled latch. The second output section includes one or more second driving transistors to drive a second current through the second output section and not through the cross-coupled latch. Current flows of the output sections are isolated from the latch circuit. Since two PMOS type transistors serially connected are not constituted, the consumption of a die area is reduced. A single control signal is used to drive the write driver.</p>
申请公布号 JP2014086125(A) 申请公布日期 2014.05.12
申请号 JP20130216138 申请日期 2013.10.17
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 YOUN YONGSIK;CHA SOOHO;KANG DONGSEOK;CHAN-KYUNG KIM
分类号 G11C11/15;H01L21/8246;H01L27/105;H01L29/82;H01L43/08 主分类号 G11C11/15
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