发明名称 |
WRITE DRIVER IN SENSE AMPLIFIER FOR RESISTIVE TYPE MEMORY AND OPERATION METHOD THEREOF |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a write drive for use for level shifting in a sense amplifier for a resistive type memory.SOLUTION: The write driver includes a cross-coupled latch, a first output section, a second output section, and an input section. The first output section includes one or more first driving transistors to drive a first current through the first output section and not through the cross-coupled latch. The second output section includes one or more second driving transistors to drive a second current through the second output section and not through the cross-coupled latch. Current flows of the output sections are isolated from the latch circuit. Since two PMOS type transistors serially connected are not constituted, the consumption of a die area is reduced. A single control signal is used to drive the write driver.</p> |
申请公布号 |
JP2014086125(A) |
申请公布日期 |
2014.05.12 |
申请号 |
JP20130216138 |
申请日期 |
2013.10.17 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
YOUN YONGSIK;CHA SOOHO;KANG DONGSEOK;CHAN-KYUNG KIM |
分类号 |
G11C11/15;H01L21/8246;H01L27/105;H01L29/82;H01L43/08 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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