| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a solid state imaging device that reduces damage to a photoelectric conversion part due to an etching of an interlayer insulation layer.SOLUTION: A method for manufacturing a back-illuminated solid state imaging device in which a photoelectric conversion part and a transistor are formed, comprises: a step for forming a first insulation layer 116 on a front surface of a semiconductor substrate, and forming an interlayer insulation layer 117 on the first insulation layer 116; a step for forming a first opening for forming contact plugs 121, 122 by etching and removing a part of the first insulation layer 116 and a part of the interlayer insulation layer 117; and a step for forming a second opening for forming the shielding part 123 by etching and removing an other part of the interlayer insulation layer 117. The first opening reaches the transistor, but the first insulation layer 116 serves as an etching stop layer, thereby at least part of the first insulation layer 116 remains between the second opening and the semiconductor substrate. |
