发明名称 PLASMA PROCESSING APPARATUS AND PLASMA MONITORING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide an apparatus in which measurement can be carried out without affecting plasma and without being affected by sediment, and the plasma state can be estimated during processing.SOLUTION: A plasma processing apparatus processes an object (103) to be processed placed in a processing chamber (101), by generating plasma (108) between electrodes (102-107) in the processing chamber (101). A plurality of antennas (113a, 113b) are provided around an axis (Z) connecting the electrodes (102-107) outside the processing chamber (101), and the state of plasma is estimated by calculating a correlation of antenna outputs by an operation unit (114).</p>
申请公布号 JP2014086129(A) 申请公布日期 2014.05.12
申请号 JP20120231274 申请日期 2012.10.19
申请人 PANASONIC CORP 发明人 INAHATA TAKEHIDE ; KIDA KATSUHIRO ; KITANO HITOSHI ; SUMITA KENJI ; MURATA KAZUHIRO ; KUBOTA HARUKO ; KAJIWARA SHOICHI
分类号 H05H1/00;C23C14/52;C23C16/509;H01L21/3065;H05H1/46 主分类号 H05H1/00
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