发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To inhibit narrowing of a region for providing an internal circuit when an inductor is formed to surround the internal circuit and a shield member is provided around the inductor.SOLUTION: A semiconductor device comprises: an inductor IND which surrounds an internal circuit CIR in planar view; and a first shield member SIE1 and a second shield member SIE2 which are provided in a multilayer wiring layer. The first shield member SIE1 lies between the inductor IND and the internal circuit CIR in planar view and surrounds the internal circuit CIR. The second shield member SIE2 surrounds the inductor IND in a multiple fashion in planar view. The first shield member SIE1 and the second shield member SIE2 include the inductor IND inside in a thickness direction. The second shield member SIE2 has slit vias in the same layer with vias VA over a whole circumference.
申请公布号 JP2014086593(A) 申请公布日期 2014.05.12
申请号 JP20120234903 申请日期 2012.10.24
申请人 RENESAS ELECTRONICS CORP;OSAKI ELECTRIC CO LTD 发明人 UCHIDA SHINICHI;HASHIMOTO RYUSUKE;NAKASHIBA YASUTAKA;GO KAZUNORI;OE HIROSHI;YOSHIKAWA NORIKO
分类号 H01L27/04;H01L21/3205;H01L21/768;H01L21/822;H01L23/522 主分类号 H01L27/04
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