RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern formation method that can improve the dissolution contrast in respect to developer and that can improve the lithography characteristic.SOLUTION: The invention is a resist composition which generates acid upon exposure, and whose solubility in respect to a developer changes in accordance with the action from acid, and it contains a base material component (A) whose solubility in respect to a developer changes in accordance with the action from acid, and the invention is characterized in that the base material component (A) contains a polymeric compound (A1) having a constitutional unit (a0) represented by a general formula (a0-1). In the formula, Ris a hydrocarbon group which may have a substituent having 1 to 5 carbon atoms, Rand Rare a hydrocarbon group which may have a substituent and Rand Rmay bond together to form a ring.