发明名称 |
SEMICONDUCTOR OPTICAL MODULATION ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide an n-SI-n-type heterostructure semiconductor optical modulation element capable of reducing electrical and optical loss of a semiconductor and allowing high-speed optical modulation.SOLUTION: In order to achieve high speed optical modulation by reducing electrical and optical loss and a high quality optical modulation signal, an optical modulation region includes an n-SI-n-type heterostructure formed by sandwiching with n-type cladding layers a semi-insulating (SI) core layer having an electron density and the density of an electron trapping dopant set so that a voltage drop is efficiently generated near the centre of the SI core layer, in a range where an ohmic value of 1×10&OHgr; cm or more is secured. This structure confines propagation light near the centre of the SI layer. |
申请公布号 |
JP2014085533(A) |
申请公布日期 |
2014.05.12 |
申请号 |
JP20120234741 |
申请日期 |
2012.10.24 |
申请人 |
NIPPON TELEGR &, TELEPH CORP <,NTT>,;NTT ELECTORNICS CORP |
发明人 |
OGISO YOSHIHIRO ; KAMITOKU MASAKI ; IGA RYUZO ; ARAI MASAKAZU ; SATO TOMONARI ; HIRONO TAKUO |
分类号 |
G02F1/025 |
主分类号 |
G02F1/025 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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