DRY ETCHING METHOD OF MGO THIN FILM

摘要

The present invention relates to a dry etching method of a MgO thin film. More particularly, a dry etching method of a MgO thin film which includes a step (step 1) of preparing an etching gas as a mixture gas which contains alkane based gas 30-70 volume % and the inert gas of the residual volume; and a step (step 2) of etching the MgO thin film by using an etching mask as a hard mask patterned by ions and radicals among the plasma after the etching gas become plasma, has an excellent etching property which indicates an anisotropic etching profile without redeposition by using an etching gas as an nontoxic and noncorrosive alkane based mixture gas. Thereby, it can be applied to the manufacture of all the devices and apparatuses where the MgO thin film is used by including the manufacture of a high density magnetic memory device using a magnetic tunnel junction structure. Especially, a fine pattern is effectively formed.