SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form an oxide film having a uniform thickness and a low interface state density on an SiC substrate.SOLUTION: A semiconductor device manufacturing method comprises: forming on an SiC substrate, a bulk oxide film having a thickness close to a film thickness required as a gate oxide film (first deposition process S3); and supplying ozone having a concentration at 900°C and over of 80 volume % and over to the SiC substrate on which the bulk oxide film is formed to form an interface oxide film between the SiC substrate and the bulk oxide film (second deposition process S5). A film thickness of the interface oxide film is calculated based on a deposition rate when the SiC substrate is subject to the ozone treatment on the same conditions to form the interface oxide film of not less than 1 nm and not more than 10 nm on the SiC substrate.