| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a technology for efficiently cleaning a deposition chamber in a short period of time and to a high cleaning extent.SOLUTION: A vapor deposition apparatus includes: a deposition chamber 4 in which a substrate S is disposed, for depositing a film on the substrate S; a first supply pipe 21 which supplies gas containing a halogen and first reactive gas which reacts with the gas to deposit the film on the substrate S, into the deposition chamber 4; a second supply pipe 31 which supplies gas containing an organic metal and second reactive gas which reacts with the gas to deposit the film on the substrate S, into the deposition chamber 4; a substrate holding part 5 with which a substrate holding base 51 for holding the substrate S is provided within the deposition chamber 4; heating means 53 for deposition which is provided in the substrate holding base 51 and heats the substrate S; and heating means 60 for cleaning which is provided on a wall surface of the deposition chamber 4 excluding the substrate holding base 51 and heats the wall surface.</p> |
