PLASMA PROCESSING APPARATUS

摘要

According to the present invention, the plasma ion source unit for a plasma processing apparatus includes: a housing which has a lower part where an outlet to inject plasma ions is formed; an upper part where a process gas supply part to supply a process gas is formed; a first electrode which is installed on one side of the plasma ion generation region formed in the housing; a second electrode installed on the other side; and a guide part which guides the process gas to the center part of the plasma ion generation region. The generation of particles in the plasma ion source unit can be prevented.