SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can improve withstanding voltage while inhibiting decrease in an on-state current.SOLUTION: A silicon carbide semiconductor device 1 comprises: an element region IR and a guard ring region 5; and a semiconductor element 7 provided in the element region IR. The guard ring region 5 surrounds the element region IR in planar view and has a first conductivity type. The semiconductor element 7 includes a drift region 12 having a second conductivity type different from the first conductivity type. The guard ring region 5 includes a linear region B and a curvature region A linked to the linear region B. A value obtained by dividing a curvature radius R of an inner peripheral part 2c of the curvature region A by a thickness T1 of the drift region 12 is not less than 5 and not more than 10.