| 摘要 |
An etchant composition for patterning metal circuits for thin film transistor-liquid crystal devices is provided to obtain the etch profile of excellent tapered shape without undercut and projection by wet etching Mo/AlNd double film or Mo/Al/Mo triplet film with a single process. An etchant composition comprises phosphoric acid 55~75 weight%, nitric acid 0.75~1.99 weight%, acetic acid 10~20 weight%, etch control agent 0.05~0.5 weight%, boron-containing compound 0.02~3 weight% and the balance of water. The etch control agent is one or more salt compounds selected from the group consisting of MH2PO4, M2HPO4, M3PO4, MHSO4 , M2SO4, CH3COOM, MHCO3, M2CO3, MNO3 and M2C2O4, wherein M is NH4, Na or K. |
